METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE USING ARF LIGHT SOURCE FOR PREVENTING DEFORMATION OF PATTERN AND COLLAPSE OF PATTERN

摘要

PURPOSE: A method of forming a pattern of a semiconductor device using an ArF light source is provided to prevent loss of an ArF photoresist pattern by performing an etch process using a mixing gas of Cl2/Ar and etchant and performing an etch process using the patterned etchant. CONSTITUTION: An etching target layer(20) is formed on a semiconductor substrate(10). A BARC(Bottom Anti-Reflective Coating) layer(40) is formed on the etching target layer. A photoresist pattern(50) is formed on the BARC layer by performing an ArF photo-lithography process. The BARC layer is etched by using a mixing gas of Cl2/Ar. The etching target layer is etched by using the patterned BARC layer as a mask.