发明名称 |
SIMPLIFIED HYDRIDE VAPOR PHASE EPITAXY(HVPE) GROWTH APPARATUS AND METHOD FOR GROWING ALGAN CRYSTAL USING MIXTURE OF GALLIUM AND ALUMINUM AS SOURCE METAL |
摘要 |
PURPOSE: AN HVPE(Hydride Vapor Phase Epitaxy) growth apparatus and method for growing an AlGaN crystal are provided to control easily the temperature of a source metal and the compositional ratio of Al and Ga in the AlGaN crystal and to simplify the structure of the apparatus by using a mixture of Al and Ga as the source metal. CONSTITUTION: An HVPE growth apparatus includes a reaction chamber, a gas supply part and a temperature control part. The reaction chamber(110) stores a mixture of Al and Ga and a substrate(140), so that discrete storage parts for Al and Ga are unnecessary in the chamber. The gas supply part(120) is used for supplying an HCl gas, an NH3 gas and a carrier gas of the HCl gas and NH3 gas to the reaction chamber. The temperature control part(130) is used for controlling temperatures of the mixture and the substrate.
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申请公布号 |
KR20050009340(A) |
申请公布日期 |
2005.01.25 |
申请号 |
KR20030048571 |
申请日期 |
2003.07.16 |
申请人 |
LIFE AND LED CO., LTD. |
发明人 |
AHN, HYUNG SOO;CHANG, JI HO;YANG, MIN;YI, SAM NYUNG |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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