发明名称 |
High-density plasma process for filling high aspect ratio structures |
摘要 |
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and fluorine as process gases in the reactive mixture of a plasma-containing CVD reactor. The process gas also includes dielectric forming precursors such as silicon and oxygen-containing molecules.
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申请公布号 |
US6846745(B1) |
申请公布日期 |
2005.01.25 |
申请号 |
US20020058897 |
申请日期 |
2002.01.28 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
PAPASOULIOTIS GEORGE D.;GAURI VISHAL;TARAFDAR RAIHAN M.;SINGH VIKRAM |
分类号 |
H01L21/314;H01L21/316;H01L21/762;(IPC1-7):H01L21/322;H01L21/302;H01L21/31;H01L21/26 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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