DRAM CELLS HAVING BAR-SHAPED STORAGE NODE CONTACT PLUGS FOR IMPROVING DRIVE PERFORMANCE THEREOF AND FABRICATING METHOD THEREOF

摘要

PURPOSE: DRAM cells having bar-shaped storage node contact plugs and a fabricating method thereof are provided to improve the drive performance thereof by overlapping storage node contact plugs on storage node holes of cell array regions. CONSTITUTION: A bit line interlayer dielectric(140) is formed on a semiconductor substrate(100). A bit line and a plurality of bit line patterns are laminated on the bit line interlayer dielectric. The bit line patterns are formed with bit line capping layer patterns. A plurality of bit line spacers are formed on sidewalls of the bit line patterns. A plurality of buried holes(150) are formed in a predetermined region of the bit line interlayer dielectric between the bit line patterns. A plurality of storage node contact plugs(159) are formed between the bit line patterns.