METHOD OF FORMING TRENCH OF SEMICONDUCTOR DEVICE TO INCREASE ETCH SPEED AND RESTRAIN MICRO-TRENCH AND MICRO-LOADING EFFECT

摘要

PURPOSE: A method of forming a trench of a semiconductor device is provided to increase an etch speed and restrain a micro-trench and a micro-loading effect by causing a defect from a trench region of a semiconductor substrate. CONSTITUTION: A first pad layer(12) and a second pad layer(14) are formed on a semiconductor substrate(10). The semiconductor substrate is exposed by pattering the second pad layer and the first pad layer. An ion implantation process for the exposed semiconductor substrate is performed to cause a defect from the exposed semiconductor substrate. A trench(24) is formed by performing an etching process using a trench etch mask.