METHOD OF FORMING CAPACITOR OF SEMICONDUCTOR DEVICE FOR PREVENTING GENERATION OF LEAKAGE CURRENT

摘要

PURPOSE: A method of forming a capacitor of a semiconductor device is provided to prevent leakage current by forming an insulating layer on an undercut part of an insulator layer. CONSTITUTION: A first metal layer, an insulator layer, a second metal layer, and a hard mask are sequentially formed on a semiconductor substrate. An upper electrode region is defined by forming a photoresist pattern on the hard mask. The hard mask is etched by using the photoresist pattern as a mask. The first metal layer is etched by using the photoresist pattern and the remaining hard mask as masks. The photoresist pattern is removed therefrom. The insulator layer is etched by using the remaining hard mask as a mask. An oxide layer(210) is formed on the resultant structure.