发明名称 METHOD FOR PREVENTING WRINGING EFFECT IN DDR SDRAM AND APPARATUS FOR THE SAME, ESPECIALLY PREVENTING WRINGING EFFECT BY DQS BUFFER
摘要 PURPOSE: A method for preventing the wringing effect in DDR SDRAM and an apparatus for the same are provided to prevent the wringing effect by DQS buffer in such a way that the DQS signal having the wringing effect does not pass the DQS buffer. CONSTITUTION: A method for preventing the wringing effect in DDR SDRAM includes the steps of: (a) receiving a plurality of data through the data input buffer; (b) storing the DQS signal outputted from the DQS buffer on the DQS latch; (c) generating the second signal with synchronizing the falling edge of the DQS signal; (d) storing the first data among the plurality data outputted from the data input buffer to the data input latch; (e) storing the second data among the plurality of the data outputted from the data input buffer on the data input latch; (f) transmitting the first and the second data stored at the data input latch to the data input/output sense amplifier; and (g) controlling the operation of the DQS buffer by discriminating the time finishing the burst length.
申请公布号 KR20050008314(A) 申请公布日期 2005.01.21
申请号 KR20030048228 申请日期 2003.07.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAE, SUNG HO
分类号 G11C11/40;G06F12/16;(IPC1-7):G11C11/40 主分类号 G11C11/40
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