NICKEL ALLOY SALICIDE PROCESS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, NICKEL ALLOY SILICIDE FILM FORMED THEREFROM AND SEMICONDUCTOR DEVICE MANUFACTURED BY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nickel alloy salicide process for increasing an extent of margin in heat treatment process without deteriorating electrical characteristics, method of manufacturing a semiconductor device using the same, nickel alloy silicide film formed therefrom, and semiconductor device manufactured using the same. SOLUTION: The Ni alloy salicide process includes a step of forming an Ni alloy film containing at least one kind of additive elements on a semiconductor substrate. The content thereof is from 0.1 to 10 atomic%. A heat treatment is applied to the substrate including the Ni alloy film to form a Ni alloy silicide film. This film includes lower and upper Ni alloy silicide films laminated in order on a surface of the substrate. The lower Ni alloy silicide film contains at least one kind of additive elements for a first content, and the upper Ni alloy silicide film contains at least one kind of additive elements for a second content more than the first content and is thinner than the lower Ni alloy silicide film. COPYRIGHT: (C)2005,JPO&NCIPI