| 摘要 |
PROBLEM TO BE SOLVED: To further improve a performance of a MOSFET device by means of a strained silicon fin FET device on a new insulator substrate. SOLUTION: There are formed an insulator substrate 13, a silicon seed fin 10 structure arranged on the substrate, and a strained silicon fin structure of a strained channel layer 11 manufactured on the seed fin 10 structure. A strain of the channel layer 11 occurs as a result of a lattice mismatch between a channel layer 11 material and a seed fin 10 material. Alternatively, there is further included an under seed layer arranged between a seed fin 10 structure and the substrate 13. A material of the under seed layer has a different lattice constant from a lattice constant of the seed fin 10 material. The seed fin 10 structure is strained due to a lattice mismatch between the under seed layer material and the seed fin 10 material. COPYRIGHT: (C)2005,JPO&NCIPI
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