发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor substrate for suppressing influence on a slice substrate and preventing damages by the falling of an ingot without inviting the decline of machinability even when slurry is used repeatedly for two or more times. SOLUTION: In the manufacturing method of the semiconductor substrate for adhering the ingot 3 composed of a semiconductor material to a support member 9, mounting the support member 9 on a work plate 4, then slicing the ingot 3 and forming a plurality of wafers, the support member 9 is composed of a glass material and a buffer material 12 is interposed between the support member 9 and the work plate 4. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005019823(A) 申请公布日期 2005.01.20
申请号 JP20030184727 申请日期 2003.06.27
申请人 KYOCERA CORP 发明人 NISHIZAWA TAKAAKI
分类号 B28D5/04;B28D7/04;H01L21/304;H01L31/04;(IPC1-7):H01L21/304 主分类号 B28D5/04
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