| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique of reducing a semiconductor device equipped with a super junction structure in ON-state resistance, and to provide a method of manufacturing the semiconductor device easily. SOLUTION: The semiconductor device is equipped with a second conductivity-type source region 32, a first conductivity-type body region 30, a drift region 23, a second conductivity-type drain region 22, and a trench gate electrode 36. The body region 30 separates the source region 32 from the drift region 23, the drift region 23 is a super junction structure equipped with a first conductivity-type first part region 24 and a second conductivity-type second part region 26, and the trench gate electrode 36 penetrates through the body region 30 and extends in the direction in which a combination of the first part region 24 and the second part region 26 is repeatedly arranged. Furthermore, at least, a part of the first part region 24 of the drift region 23 near the trench gate electrode 36 is lower in impurity concentration than the body region 30. COPYRIGHT: (C)2005,JPO&NCIPI
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