发明名称 DEVICE AND METHOD FOR FORMING FILM
摘要 PROBLEM TO BE SOLVED: To provide a device and a method for forming film by which the film forming temperature can be lowered by using light energy and, in addition, can prevent the interruption of the transmission of light in a light transmitting window caused by film formation. SOLUTION: In the method, first and second reaction vessels are prepared and, in addition, an airtight transporting chamber used for transporting substrates between the reaction chambers is prepared. A first gas supplying section which supplies a first gaseous material, for example, a dichlorosilane gas is provided in the first reaction chamber, and a second gas supplying section which supplies a second gaseous material, for example, an ammonia gas and a light projecting section, for example, an excimer lamp are provided in the second reaction vessel. Firstly, a monomolecular layer of the dichlorosilane gas is formed on a substrate by heating the substrate in the first reaction vessel. Then the substrate is transported to the second reaction vessel, and a silicon nitride film is formed on the substrate by supplying the ammonia gas to the surface of the substrate and, at the same time, by causing a reaction between dichlorosilane molecules and ammonia on the surface of the substrate by using the light energy emitted from the excimer lamp. This cycle is performed, for example, twice or more. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005019499(A) 申请公布日期 2005.01.20
申请号 JP20030179064 申请日期 2003.06.24
申请人 TOKYO ELECTRON LTD 发明人 MATSUURA HIROYUKI
分类号 C23C16/48;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/48
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