发明名称 |
METHOD FOR MANUFACTURING SINGLE CRYSTAL, AND SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of stably manufacturing a single crystal in which the total surface in a crystal diameter direction is a defect-free region over the total range of the crystal growth axis direction when the single crystal is grown by a CZ method. SOLUTION: In the method for manufacturing the single crystal in which the total surface in the diameter direction is the defect-free region by pulling the single crystal from a raw material melt liquid in a chamber by a Czochralski method, a pulling condition is changed in the growth axis direction while pulling the single crystal so that the margin of a pulling speed capable of pulling the single crystal so that the total surface in its diameter direction is the defect-free region may be always a prescribed value or over. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005015296(A) |
申请公布日期 |
2005.01.20 |
申请号 |
JP20030184838 |
申请日期 |
2003.06.27 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
MITAMURA NOBUAKI;OTA TOMOHIKO;FUSEGAWA IZUMI;SAKURADA MASAHIRO;OZAKI ATSUSHI |
分类号 |
C30B15/00;C30B15/20;C30B29/06;(IPC1-7):C30B15/20 |
主分类号 |
C30B15/00 |
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地址 |
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