| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-density plasma processor which improves uniformity of the plasma distribution in the vicinity of a large-area object to be processed by providing an inductively coupled plasma source and a microwave source together, both of which are independently controlled. <P>SOLUTION: The plasma processor comprises a process chamber 110, in the inside of which a susceptor 112 is arranged and on the upper part of which a dielectric window 116 is installed, a gas inlet opening 122 for introducing a reaction gas into the process chamber 110, an ICP antenna 130 which is installed on the upper part of the dielectric window 116 in a region that corresponds to the center of the process chamber 110 to send a high-frequency power from an RF source to the inside of the process chamber, a waveguide 142 that transfers an oscillated microwave from a microwave oscillator 140, and an annular radiating tube 146 that is connected to the waveguide 142 by being arranged on the upper part of the dielectric window 116 in a region that corresponds to a peripheral part of the process chamber 110 so as to surround the ICP antenna 130, and radiates the microwave toward the inside of the process chamber 110 through a plurality of slots 148 formed on the bottom wall of the annular radiating tube 146. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
