| 摘要 |
PURPOSE: A method for fabricating a ferroelectric capacitor is provided to reduce etch damage to a ferroelectric due to a metal layer formation process by eliminating a metal layer and by making an upper electrode layer function as a metal layer. CONSTITUTION: A semiconductor substrate(200) having an isolation layer is prepared. A diffusion blocking material, a material for forming a lower electrode(320') and a ferroelectric material(340') are sequentially deposited on the front surface of the semiconductor substrate. A photoresist layer pattern for defining a region for forming a capacitor is formed on the resultant structure. The ferroelectric material, the material for forming the lower electrode and the diffusion blocking material are sequentially etched to form a ferroelectric layer, the lower electrode and a diffusion barrier layer by using the photoresist layer pattern as a mask. The photoresist layer pattern is eliminated. A material for forming an upper electrode(420) is formed on the resultant structure. By using an etch mask as a photoresist layer pattern that covers the entire of the ferroelectric layer and extends to a power terminal to apply a voltage to the ferroelectric, the material for forming the upper electrode is etched to form the upper electrode.
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