| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is formed on a level difference part on a GaAs substrate, especially a semiconductor device which is formed on a ä111} inclined plane and contains a p-type region doped with silicon as impurities. SOLUTION: The semiconductor device formed on a level difference part includes the GaAs substrate which is equipped with a front surface composed of two ä100} flat planes which are nearly parallel with each other and a ä111} inclined plane sandwiched between the ä100} flat planes, an n-type first GaAs layer formed on the front surface, a second GaAs layer which is provided on the first GaAs layer and loaded with silicon as impurities to turn the ä100} flat planes to n-type GaAs regions and the ä111} inclined plane to a p-type GaAs region, a gate electrode provided on the p-type GaAs region, and a source electrode and a drain electrode provided on the n-type GaAs regions so as to sandwich the gate electrode between them. COPYRIGHT: (C)2005,JPO&NCIPI
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