| 摘要 |
1,271,639. Semi-conductor devices. SIEMENS A.G. 14 Dec., 1970 [15 Dec., 1969], No. 59251/70. Heading H1K. In a Schottky diode a conductive layer contacts the surface of the semi-conductor body through an aperture in a thin insulating layer which extends on to a thicker insulating layer surrounding the contact. The part of the contact extending over the thin insulating layer increases the breakdown voltage of the diode by redistributing the electric field at the edge of the contact. As shown, a high resistivity epitaxial layer 2 on a substrate 1 is provided with a thermally deposited layer 3 of SiO 2 , a first window 5 is etched in layer 3, a layer 4 of Si 3 N 4 is thermally deposited, a window 6 is etched in the layer 4 within the window 5, and a rectifying contact 7 of Al, Al-Ni alloy, or platinum silicide is deposited. The thin insulating layer 4 may comprise two. or more films, for example it may be formed by depositing a film of Si 3 N 4 on a film of SiO 2 . The semi-conductor material may be Si, Ge or GaAs. |
