METHOD AND APPARATUS FOR HOLDING A SUBSTRATE DURING HIGH PRESSURE PROCESSING

摘要

A vacuum chuck for holding a semiconductor wafer during supercritical processing comprising: a substantially smooth wafer holding region for holding the semiconductor wafer; a vacuum port for applying vacuum to a portion of the wafer holding region; and a material applied between the semiconductor wafer and the wafer holding region, the material being conformable to provide substantially intimate contact between the surface of the semiconductor wafer and the wafer holding region. The material is preferably a polymer, monomer or any other suitable material is contemplated. The vacuum chuck further comprising a vacuum region configured within the wafer holding region, wherein the vacuum region is coupled to the vacuum port.