| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of easily thinning a thermal shock mitigating sheet in a cold welding type semiconductor device by more reducing the dangerousness of damaging a semiconductor element, and the manufacturing method of the semiconductor device. SOLUTION: The semiconductor element 100 is formed and a semiconductor surface electrode (210), consisting of a semiconductor material having a thermal expansion coefficient substantially equal to that of the semiconductor element 100, is formed and the semiconductor element 100 is connected to the semiconductor surface electrode (210) through anode connection to form a semiconductor surface electrode 200 on the semiconductor element 100 integrally as the surface electrode for the semiconductor element 100 and, thereafter, a surface of opposite side to the connecting surface of the semiconductor surface electrode 200 is ground to manufacture the semiconductor device. According to this method, the surface of the semiconductor element 100 will not receive danger, such as strain or abrasion, due to the change of temperature in the pressure welding type semiconductor device and, in addition, danger, such as breaking by damaging a delicate element structure upon manufacturing or the like, can be avoided. COPYRIGHT: (C)2005,JPO&NCIPI
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