| 摘要 |
PROBLEM TO BE SOLVED: To suppress the thermal oxidation of a semiconductor substrate via pin holes in a nitride film. SOLUTION: A silicon oxide film 5 is laminated on a silicon nitride film 4, and a thermal oxidation film 6 is formed in a transistor formation area R1. Furthermore, a thermal oxidation film 7 having a different thickness from the thermal oxidation film 6 is formed in a transistor formation area R2, and an upper electrode 11 is formed on the silicon nitride film 4 in a capacitor formation area R3. COPYRIGHT: (C)2005,JPO&NCIPI
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