| 摘要 |
A semiconductor device including memory cells isolated by a trench that may be self aligned with a stacked film pattern (7) has been disclosed. The memory cells may be flash memory cells having an active gate film (2) that may be thinner than a gate oxide film (30). The active gate film (2) may be located in a central portion under of a gate electrode (3). The gate oxide film (30) may be located under end portions of the gate electrode (3). In this way, a distance between a shoulder portion of a trench (11) and a gate electrode (3) may be increased. Thus, an electric field concentration in the shoulder portion of the trench (11) may be decreased and memory cell characteristics may be improved.
|
