METHOD FOR MANUFACTURING SINGLE CRYSTAL, AND SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal, in which the single crystal having a desired defect area can be efficiently manufactured in a short time at a high yield by controlling the ratio V/G by controlling change of the crystal temperature gradient G during pulling the single crystal without reducing the pulling speed V when the single crystal is grown by a Czochralski (CZ) method. SOLUTION: In the method for manufacturing the single crystal by pulling it from a raw material melt by the CZ method, when the pulling speed at the time of growing the constant diameter part of the single crystal is expressed as V (mm/min) and the crystal temperature gradient in the pulling-axis direction in the vicinity of the solid-liquid interface is expressed as G (°C/mm) when growing the single crystal, the ratio V/G (mm2/°C×min) of the pulling speed V to the crystal temperature gradient G is controlled by controlling the crystal temperature gradient G by changing the position of a heater for heating the raw material melt so that the single crystal having the desired defect area can be grown. COPYRIGHT: (C)2005,JPO&NCIPI