VERFAHREN ZUR CHEMISCHEN DAMPFPHASENINFILTRATION VON MATERIAL INS INNERE EINES PORÖSEN SUBSTRATES MIT KONTROLLIERTER OBERFLÄCHENTEMPERATUR

摘要

PCT No. PCT/FR94/01090 Sec. 371 Date Apr. 25, 1996 Sec. 102(e) Date Apr. 25, 1996 PCT Filed Sep. 20, 1994 PCT Pub. No. WO95/11868 PCT Pub. Date May 4, 1995The substrate (10) is placed in an enclosure (12) and is heated so as to establish therein a temperature gradient such that the substrate has a higher temperature in portions that are remote from its exposed surfaces than at its exposed surfaces. A reaction gas constituting a precursor for the material to be infiltrated is admitted into the enclosure, with formation of the material being enhanced in those portions of the substrate that are at higher temperature. At the beginning of the infiltration process, and at least during the major portion thereof, substrate heating is controlled in such a manner as to maintain the temperature of its exposed surfaces at a value that is no greater than the minimum temperature for the reaction gas to deposit the material that is to be infiltrated, while portions of the substrate that are remote from its exposed surfaces are at a temperature that is greater than the minimum temperature for deposition.