| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic power element which raises a power generation efficiency by simultaneously reducing a reflection loss and a recombination loss while maintaining the function of a protective film. <P>SOLUTION: A photoelectric conversion element includes a silicon nitride film formed on a semiconductor substrate and provided as a protective film along with the function of an antireflection film on a photodetecting surface. A content of a hydrogen or a halogen is increased in a boundary region between the silicon nitride film and the semiconductor substrate as compared with the other part, and a ratio of an Si content/N content is increased, and thereby a refractive index in the boundary region is maintained equivalent to the other part. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
