发明名称 Semiconductor device
摘要 A transistor region is a region where a plurality of MOS transistors, including an MOS transistor, are formed, and a dummy region is a region lying under a spiral inductor. In the dummy region, a plurality of dummy active layers are disposed in the main surface of an SOI substrate and a plurality of dummy gate electrodes are disposed covering the respective dummy active layers. The arrangement pattern of the dummy active layers and the arrangement pattern of the dummy gate electrodes nearly match, so that the dummy gate electrodes are aligned accurately on the dummy active layers.
申请公布号 US2005012153(A1) 申请公布日期 2005.01.20
申请号 US20040887839 申请日期 2004.07.12
申请人 RENESAS TECHNOLOGY CORP. 发明人 IPPOSHI TAKASHI
分类号 H01L21/762;H01L21/76;H01L21/822;H01L21/8234;H01L21/84;H01L23/522;H01L27/01;H01L27/04;H01L27/06;H01L27/08;H01L27/088;H01L27/12;H01L29/786;(IPC1-7):H01L27/01 主分类号 H01L21/762
代理机构 代理人
主权项
地址
您可能感兴趣的专利