| 摘要 |
A masking structure for patterning an underlying layer (20) formed from material to be etched comprises the superposition of a lower masking layer (11) formed from a first organic photo-resist reacting to a first given wavelength value, and an upper masking layer (13) formed from a second organic photo-resist reacting to a second given wavelength. The first wavelength value is higher than the second wavelength value. The first organic photo-resist exhibits a higher selectivity against the material to be etched than the second organic photo-resist. An anti-reflective coating layer (20) may be formed between the lower masking layer and the upper masking layer. The upper masking layer is patterned according to a desired pattern. The pattern is then transferred from the upper masking layer through the lower masking layer. Finally, the underlying layer is etched by using the lower masking layer as an etch mask. |
