| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC semiconductor device in which channel mobility in an SiC crystal is significantly improved, and to provide a method for manufacturing it. SOLUTION: In a method for forming a semiconductor device on a semiconductor substrate of an SiC, a mixed gas comprising an oxygen and a rare gas is plasma-excited. By using an oxygen radical as an oxygen excitation active species, and setting a substrate temperature at 500-1,250°C, a silicon oxide film is formed. Continuously, oxynitriding process is performed to remove carbon by using an oxygen molecule and an oxygen atom converted into a radical. Consequently the channel mobility of 62 cm<SP>2</SP>/Vs is gained. COPYRIGHT: (C)2005,JPO&NCIPI
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