发明名称 MANUFACTURING METHOD OF SILICON DIOXIDE NANO-WIRE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon dioxide nano-wire that has a stabilized composition and is highly oriented. SOLUTION: The method for manufacturing a silicon dioxide nano-wire comprises separately arranging a silicon substrate having nickel nano-particles attached thereon and an indium oxide powder in an infrared irradiation heating furnace and in a mixed gas stream of nitrogen gas and ammonia gas and heating the silicon substrate having nickel particles attached thereon at from 900°C or higher to 1,000°C or lower and heating the indium oxide powder at from 650°C or higher to 680°C or lower. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005015258(A) 申请公布日期 2005.01.20
申请号 JP20030180077 申请日期 2003.06.24
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 BANDO YOSHIO;RENZHI MA
分类号 C01B33/12;(IPC1-7):C01B33/12 主分类号 C01B33/12
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