发明名称 |
MANUFACTURING METHOD OF SILICON DIOXIDE NANO-WIRE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon dioxide nano-wire that has a stabilized composition and is highly oriented. SOLUTION: The method for manufacturing a silicon dioxide nano-wire comprises separately arranging a silicon substrate having nickel nano-particles attached thereon and an indium oxide powder in an infrared irradiation heating furnace and in a mixed gas stream of nitrogen gas and ammonia gas and heating the silicon substrate having nickel particles attached thereon at from 900°C or higher to 1,000°C or lower and heating the indium oxide powder at from 650°C or higher to 680°C or lower. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005015258(A) |
申请公布日期 |
2005.01.20 |
申请号 |
JP20030180077 |
申请日期 |
2003.06.24 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
BANDO YOSHIO;RENZHI MA |
分类号 |
C01B33/12;(IPC1-7):C01B33/12 |
主分类号 |
C01B33/12 |
代理机构 |
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代理人 |
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