| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which attains a low aspect ratio without lowering a kink level. SOLUTION: The semiconductor laser device is configured such that an active layer is provided between a semiconductor layer of one conductive type and a semiconductor layer of the other conductive type having a ridge, and that a window region, i.e. a non-gain region is provided at each of opposite ends thereof. An equivalent index difference between a ridge and both ends thereof in the window regions is made larger than that between a ridge and both ends thereof in a gain region excepting the window regions. COPYRIGHT: (C)2005,JPO&NCIPI
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