METHOD FOR FABRICATING GATE STRUCTURE OF FET WITH METAL-CONTAINING GATE ELECTRODE TO ETCH METALS OR METAL-CONTAINING COMPOUNDS

摘要

PURPOSE: A method for fabricating a gate structure of a FET(field effect transistor) with a metal-containing gate electrode is provided to etch metals or metal-containing compounds by using plasma including bromine-containing gas. CONSTITUTION: A substrate is prepared which has a metal-containing gate electrode layer formed on a gate dielectric layer. A patterned mask is formed on the metal-containing gate electrode layer, defining the position and topographic dimensions of the gate structure. The metal-containing gate electrode layer is etched by using plasma including bromine-containing gas. The gate dielectric layer is etched(110).