MASK PATTERN WITH EMBLAZONING MARKER STRUCTURES FOR ALIGNMENT OR OVERLAY ON BOARD IN LITHOGRAPHY PROJECTION

摘要

PURPOSE: Provided is a mask pattern which emblazons marker structures for alignment or overlay on board to correct pattern induced displacement, with reducing limitation of optical projection in a lithography process. CONSTITUTION: In the mask pattern which emblazons the marker structures on the board in the lithography projection, the marker structures includes components which are divided into plural partition factors with device feature size respectively, with the mask pattern having segment form of each partition factor, the components of the marker structures are divided into the partition factors in a vertical direction against the scanning direction in the lithography projection.