发明名称 |
Integrated stacked capacitor and method of fabricating same |
摘要 |
An integrated stacked capacitor comprises a first capacitor film (46) of polycrystalline silicide (poly), a second capacitor film (48) and a first dielectric (26) sandwiched between the first capacitor film (46) and second capacitor film (48). A second dielectric (34) and a third capacitor film (50) are provided. The second dielectric (34) is sandwiched between the second capacitor film (48) and third capacitor film (50). A method for fabrication of an integrated stacked capacitor comprises the following sequence of steps: applying a polysilicide layer (20) to form the first capacitor film (46); applying a first dielectric (26); applying a first metallization layer (28) to form the second capacitor film (48); applying a second dielectric (34); and applying a second metallization layer (34) to form the third capacitor film (50).
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申请公布号 |
US2005006687(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040850797 |
申请日期 |
2004.05.20 |
申请人 |
DIRNECKER CHRISTOPH;BABCOCK JEFFREY;BALSTER SCOTT |
发明人 |
DIRNECKER CHRISTOPH;BABCOCK JEFFREY;BALSTER SCOTT |
分类号 |
H01L21/02;H01L27/08;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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