| 摘要 |
A bonding pad structure is suitable for a chip to improve conventional current density crowding at the bonding location between a bonding pad and an UBM layer, at which a current can not smoothly flow through due to the turning angle of the bonding location is overlarge. Therefore, an improvement structure of the bonding pad is formed by including a protruding pad on the top surface of the bonding pad. The turning angle of side profile of the protruding pad connected to the top surface of the bonding pad is less than 90 degrees, so as to smooth the turning angle when the current passes through. |
