| 摘要 |
PROBLEM TO BE SOLVED: To form a fine contact hole using a KrF lithography technique. SOLUTION: A TEOS film as an interlayer insulating film 2 is formed on a silicon substrate 1 to have a thickness larger than a desired film thickness, e.g., to have a thickness of 2,000 nm. A resist pattern 3 is formed on a TEOS (tetraethylorthosilicate) film 2 using the KrF lithography technique. The substrate is etched with use of the resist pattern 3 as a mask to form a contact hole 4 in the TEOS film 2. The diameter of the contact hole 4 is reduced by etching back the upper layer of the TEOS film 2, for example, by about 1,000 nm. COPYRIGHT: (C)2005,JPO&NCIPI
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