| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a contact by fully improving the coverage of a side-face portion in a fine contact hole, when forming a wiring layer through a sputtering method. SOLUTION: Using liquid nitrogen, a silicon substrate 1 is kept at room temperature or lower to below 40°C, to form a titanium film 6 and an aluminum alloy film 7 by sputtering method. This enables core-forming density to be improved on the side face of a contact hole 5, and also enables the aluminum alloy film 7 to grow in the lateral direction, in the opening portion of the contact hole 5. COPYRIGHT: (C)2005,JPO&NCIPI
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