RADIATION-EMITTING SEMI-CONDUCTOR COMPONENT

摘要

The invention relates to a radiation-emitting semi-conductor element provided with a layered structure, comprising an n-doped confinement layer (14), a p-doped confinement layer (22), and an active layer (18) emitting photons, said layer being arranged between the n-doped confinement layer (14) and the p-doped confinement layer (22). According to the invention, the n-doped confinement layer (14) is doped with a first n-dopant (or two n-dopants which are different from each other) in order to produce a high active doping and a precise doping profile, and the active layer (18) is doped with exclusively one second n dopant, which is different form the first dopant, in order to improve the layer quality of the active layer (18).