发明名称 METHOD AND APPARATUS FOR MONITORING A PLASMA IN A MATERIAL PROCESSING SYSTEM
摘要 The present invention presents an improved apparatus and method for monitoring a material processing system (100), wherein the material processing system includes a plasma processing tool, a number of RF-responsive sensors (190) coupled to the plasma processing tool to generate and transmit plasma data, and a sensor interface assembly (SIA) (180) configured to receive the plasma data from the plurality of RF-responsive sensors.
申请公布号 WO2004059689(A3) 申请公布日期 2005.01.13
申请号 WO2003IB06458 申请日期 2003.11.25
申请人 TOKYO ELECTRON LIMITED 发明人 KLEKOTKA, JAMES, E.
分类号 H01J37/32;H01L21/00 主分类号 H01J37/32
代理机构 代理人
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