发明名称 High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same
摘要 A high frequency semiconductor module, includes: a semiconductor chip having top and bottom surfaces; a semiconductor element merged in the semiconductor chip; a ground pad of the semiconductor element disposed on the top surface; a metal layer configured to connect to the ground pad and extend to sidewalls of the semiconductor chip; a ground metal arranged on a surface of a mounting substrate; and a conductive material formed on the ground, configured to connect the metal layer and the ground metal.
申请公布号 US2005006742(A1) 申请公布日期 2005.01.13
申请号 US20040902780 申请日期 2004.08.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUGIYAMA TORU;MORIZUKA KOUHEI;SUGIURA MASAYUKI;KURIYAMA YASUHIKO;TANABE YOSHIKAZU
分类号 H01L23/12;H01L23/00;H01L23/485;H01L23/488;(IPC1-7):H01L31/119 主分类号 H01L23/12
代理机构 代理人
主权项
地址