发明名称 |
High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same |
摘要 |
A high frequency semiconductor module, includes: a semiconductor chip having top and bottom surfaces; a semiconductor element merged in the semiconductor chip; a ground pad of the semiconductor element disposed on the top surface; a metal layer configured to connect to the ground pad and extend to sidewalls of the semiconductor chip; a ground metal arranged on a surface of a mounting substrate; and a conductive material formed on the ground, configured to connect the metal layer and the ground metal.
|
申请公布号 |
US2005006742(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040902780 |
申请日期 |
2004.08.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGIYAMA TORU;MORIZUKA KOUHEI;SUGIURA MASAYUKI;KURIYAMA YASUHIKO;TANABE YOSHIKAZU |
分类号 |
H01L23/12;H01L23/00;H01L23/485;H01L23/488;(IPC1-7):H01L31/119 |
主分类号 |
H01L23/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|