发明名称 |
Process to reduce substrate effects by forming channels under inductor devices and around analog blocks |
摘要 |
A first method of reducing semiconductor device substrate effects comprising the following steps. O<+>or O2<+>are selectively implanted into a silicon substrate to form a silicon-damaged silicon oxide region. One or more devices are formed over the silicon substrate proximate the silicon-damaged silicon oxide region within at least one upper dielectric layer. A passivation layer is formed over the at least one upper dielectric layer. The passivation layer and the at least one upper dielectric layer are patterned to form a trench exposing a portion of the silicon substrate over the silicon-damaged silicon oxide region. The silicon-damaged silicon oxide region is selectively etched to form a channel continuous and contiguous with the trench whereby the channel reduces the substrate effects of the one or more semiconductor devices. A second method of reducing substrate effects under analog devices includes forming an analog device on a SOI substrate and then selectively etching the silicon oxide layer of the SOI substrate to form a channel at least partially underlying the analog device.
|
申请公布号 |
US2005009357(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040909523 |
申请日期 |
2004.08.02 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
CHAN LAP;CHU SANFORD;NG CHIT HWEI;VERMA PURAKH;ZHENG JIA ZHEN;CHEW JOHNNY;SIA CHOON BENG |
分类号 |
H01L21/20;H01L21/265;H01L21/302;H01L21/461;H01L21/764;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|