发明名称 TFT AND FABRICATING METHOD THEREOF TO FORM LCD TFT ON INEXPENSIVE UNANNEALED GLASS SUBSTRATE
摘要 <p>PURPOSE: A TFT(thin film transistor) is provided to form an LCD(liquid crystal display) TFT on an inexpensive unannealed glass substrate by performing a surface treatment on a polycrystalline silicon layer by ozone oxidation. CONSTITUTION: Channel and drain regions(12,9) made of polycrystalline silicon are formed on a glass substrate(1). At least the channel region is covered with the first insulation layer. The second insulation layer and an electrode(11) are sequentially formed on the first insulation layer. The first insulation layer is a silicon oxide layer formed by oxidizing the surface of the polycrystalline silicon and includes at least one kind of atom of boron and phosphor to increase a formation rate of the oxide layer.</p>
申请公布号 KR20050004758(A) 申请公布日期 2005.01.12
申请号 KR20040111761 申请日期 2004.12.24
申请人 KABUSHIKI KAISHA HITACHI SEISAKUSHO 发明人 HORIKOSHI, KAZUHIKO;NAKAHARA, MIWAKO;NAKANO, YASUSHI;OGATA, KIYOSHI;OOKURA, MAKOTO;ORITSUKI, RYOUJI;SHIBA, TAKEO;TAMURA, TAKUO
分类号 G02F1/1368;G09F9/00;G09F9/30;G09F9/35;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L29/786 主分类号 G02F1/1368
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