ION IMPLANTATION APPARATUS FOR DETERMINING ION IMPLANTATION ENERGY ACCORDING TO THICKNESS OF OXIDE LAYER FORMED ON SURFACE OF WAFER BY INSTALLING THICKNESS MEASUREMENT UNIT AT LOAD LOCK CHAMBER

摘要

PURPOSE: An ion implantation apparatus is provided to determine ion implantation energy according to a thickness of an oxide layer formed on a surface of a wafer by installing a thickness measurement unit at a load lock chamber. CONSTITUTION: An ion implantation apparatus includes an ion generator(10) for preparing ions implanted onto a surface of a wafer and a process chamber(60) for irradiating the ion beams. A thickness measurement unit(75) is installed in the inside of the ion implantation apparatus in order to measure a thickness of an oxide layer formed on the surface of the wafer. The ion implantation energy is determined according to the measured thickness of the oxide layer.