| 摘要 |
PURPOSE: A method of fabricating a semiconductor device is provided to secure an etching margin and remove stably a polymer by using an O3 USG layer as a hard mask. CONSTITUTION: A barrier metal layer(22), an aluminum layer(23), and a scattered reflection layer(24) are sequentially formed on a semiconductor substrate(21). An O3 USG layer(25) as a hard mask layer is formed on the scattered reflection layer. The hard mask layer, the scattered reflection layer, the aluminum layer, and the barrier metal layer are patterned. A liner oxide layer(27) is deposited on the resultant structure. An HDP-FSG layer(28) as an interlayer dielectric is formed on the liner oxide layer.
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