发明名称 |
Method for manufacturing differential isolation structures in a semiconductor electronic device and corresponding structure |
摘要 |
<p>This invention relates to a method for manufacturing isolation structures with different depths in a monolithically integrated semiconductor electronic device. The inventive method comprises a first step of defining active areas on a semiconductor material substrate, a second step of forming isolation structures by realising trenches in said substrate and then filling them with field oxide, a third step of defining lithographically at least a first device area, and a fourth step of reducing the vertical height of the substrate and of the field oxide of said first device area. <IMAGE></p> |
申请公布号 |
EP1496548(A1) |
申请公布日期 |
2005.01.12 |
申请号 |
EP20030425459 |
申请日期 |
2003.07.11 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
BRAZZELLI, DANIELA;BALDI, LIVIO;SERVALLI, GIORGIO |
分类号 |
H01L21/762;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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