发明名称 |
Method for fabricating embedded nonvolatile semiconductor memory cells |
摘要 |
A method for fabricating embedded nonvolatile semiconductor memory cells is described. The method includes forming a first insulating layer on a substrate having a high-voltage region, a memory region and a logic region. The first insulating layer is removed in the memory region, and a second insulating layer is formed. A charge-storing layer is formed and patterned along with a third insulating layer. The first to third insulating layers and also the charge-storing layer are removed in the logic region. A fourth insulating layer is formed and a conductive control layer is formed and patterned.
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申请公布号 |
US6841448(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20020045278 |
申请日期 |
2002.01.14 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GEHRING OLIVER;LANGHEINRICH WOLFRAM |
分类号 |
H01L21/28;H01L21/8246;H01L27/105;(IPC1-7):H01L21/823;H01L21/321 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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