| 发明名称 |
In situ deposition of a nitride layer and of an anti-reflective layer |
| 摘要 |
A process for fabricating a semiconductor structure comprises depositing a nitride layer on a semiconductor substrate with a first tool, and depositing an anti-reflective layer on the semiconductor substrate with the first tool. The nitride layer includes silicon and nitrogen.
|
| 申请公布号 |
US6841491(B1) |
申请公布日期 |
2005.01.11 |
| 申请号 |
US20010039469 |
申请日期 |
2001.11.08 |
| 申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
SADOUGHI SHARMIN;RAMKUMAR KRISHNASWAMY |
| 分类号 |
H01L21/027;H01L21/318;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
