发明名称 |
Anti-type dosage as LDD implant |
摘要 |
A method is provided for turning off MOS transistors through an anti-code (type) LDD implant without the need for high energy implant that causes poly damage. The method also negates any deleterious effects due to the variations in the thickness of the poly gate. The anti-code LDD implant can be performed vertically, or at a tilt angle, or in a combination of vertical and tilt angle. The method can be made part of a Flash-ROM process that is applicable to both polycide and silicide processes.
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申请公布号 |
US6841460(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20040798992 |
申请日期 |
2004.03.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHO SHU-YING;WANG CHIEN-CHUNG;CHUNG CHIEN-MING;HUANG YUAN-CHANG |
分类号 |
H01L21/8238;H01L21/8246;H01L27/112;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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