发明名称 Method of manufacturing wiring structure of a power semiconductor device
摘要 A semiconductor device includes a power supply semiconductor chip that has a plurality of current passing electrodes. Conductive plates are disposed on the current electrodes, and conductive wires used for an external connection of the device are fixed on the conductive plates, but not directly on the current passing electrode. A large plate is first fixed on the semiconductor chip, and then the back surface of the large plate is removed to form the individual conductive plates. Because the conductive wires are soldered onto the conductive plates, the semiconductor chip does not receive impact of wire bonding. Even when the conductive wires are wire bonded to the conductive plates, the plates may serve as shock absorbers during wire bonding procedure to reduce the impact of the wire bonding.
申请公布号 US6841421(B2) 申请公布日期 2005.01.11
申请号 US20030374728 申请日期 2003.02.27
申请人 SANYO ELECTRIC CO., LTD. 发明人 AONO TSUTOMU;OKADA KIKUO
分类号 H01L23/48;H01L23/522;H01L27/10;(IPC1-7):H01L21/44 主分类号 H01L23/48
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