发明名称 System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
摘要 A system for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen compounds XFn (wherein X is Cl, Br, or I, and n is an odd integer). Such system comprises a fluorine source, a halogen source for supplying halogen species other than fluorine, a chamber for mixing fluorine with halogen species other than fluorine, and an energy source to supply energy to such chamber to facilitate reaction between fluorine and the halogen species other than fluorine. The chamber may be a semiconductor processing chamber, wherein the in situ generated fluorine radicals and/or fluorine-containing interhalogens are employed for cleaning the processing chamber.
申请公布号 US6841141(B2) 申请公布日期 2005.01.11
申请号 US20020065219 申请日期 2002.09.26
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 ARNO JOSE I.;OLANDER W. KARL
分类号 B08B7/00;C23C16/44;(IPC1-7):C01B7/00;C01D3/02;A61L2/00 主分类号 B08B7/00
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