PROCEDE DE DEPOT D'UNE COUCHE EPITAXIALE D'UN MATERIAU SEMI-CONDUCTEUR SUR LA SURFACE D'UN SUBSTRAT

摘要

One or more epitaxial layers of a semiconductor material are deposited on a substrate by providing for each epitaxial layer to be deposited a separate solution of a semiconductor material dissolved in a molten metal solvent. Each of the solutions is of a small volume and a weight is provided on each solution to spread the solution out in the form of a thin layer. The substrate is brought into contact with the solution and the solution is cooled to deposit the epitaxial layer on the substrate. Since the solution is in the form of a thin layer, only a minimum of platelets of the semiconductor material are formed in the solution during the deposition of the epitaxial layer so that the epitaxial layer has a smooth, even surface. To deposit a plurality of epitaxial layers on the substrate, the substrate is successively brought into contact with each solution which is then cooled to deposit an epitaxial layer. Each solution may be exactly saturated with the semiconductor material by bringing a body of semiconductor material into contact with the solution prior to bringing the substrate into contact with the solution.