| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to reduce leakage current and to prevent interface oxidation between a dielectric film and a lower electrode by forming a multiple dielectric film of HfO2 and SiO2 using ALD(Atomic Layer Deposition). CONSTITUTION: A lower electrode(22) is formed on a semiconductor substrate(20). A multiple dielectric film(200) is formed by sequentially and alternately depositing an HfO2 film(24) and an SiO2 film(25) on the lower electrode using ALD. The multiple dielectric film is densified by annealing. Then, an upper electrode(26) is formed on the dielectric film.
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